Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistance

As a metal alloy, NiCr films have relatively high resistivity and low temperature coefficient of resistance (TCR) are widely used in electronic components sensors. However, the pure is insufficient for high-resistance highly stable film resistors. In this study, quaternary NiCrAlSi target (47:33:10:10, wt. %) was successfully to prepare resistor with resistivities ranging from 1000 10 000 μΩ cm TCR within ±100 ppm/K. An oxygen flow introduced during sputtering process. The exhibit high-temperature stability at 450 °C. were analyzed using Auger electron spectroscopy, x-ray diffraction, time-of-flight secondary-ion mass spectrometry, photoelectron spectroscopy. results show that difference oxide proportion caused differences resistivity. near-zero values considered be due competition between silicon other metals. This study provides new insights into electrical properties NiCr-based containing Si, which will drive manufacturing resistors zero TCR.